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UMZ6.8EN
Diodes
Zener diode
UMZ6.8EN
!Applications Constant voltage control For the ESD measure of a signal line !External dimensions (Units : mm)
2.00.2 1.30.1 0.65 0.65 0.90.1 0.7 0.1Min.
!Construction Silicon epitaxial planar
ROHM : UMD5 EIAJ : SC-88A JEDEC : SOT-353
!Absolute maximum ratings (Ta=25C)
Parameter Power dissipation
Symbol
P
Limits 200 150 -55~+150
Unit mW C C
Junction temperature Storage temperature
Tj Tstg
Total of 4 elements
!Electrical characteristics (Ta=25C)
Parameter Zener voltage Reverse current Operating resistance Capacitance between terminals Symbol VZ IR ZZ CT Min. 6.47 - - - Typ. - - - 9 Max. 7.14 0.5 40 - Unit V A pF IZ=5mA VR=3.5V IZ=5mA f=1MHz, VR=5V Conditions
!Others
Parameter Device configuration IEC61000-4-2 Charge / discharge capacitance : 150pF Discharge resistance 10 repetitions Judgment contents No malfunction Contact Suspended : 8kV : 15kV : 330
D6F
!Features 1) Small surface mounting type. (UMD5) 2) Composite type with four athode common elements 3) High reliability
1.250.1
0.2 +0.5 -0.05
2.10.1
0~0.1
0.150.05
Each lead has same dimensions
!Equivalent circuit
UMZ6.8EN
Diodes
!Electrical characteristic curves (Ta=25C)
-25C 25C 75C 125C
300
DYNAMIC IMPEADANCE : Zz ()
ZENER CURRENT : Iz (A)
10m 1m
100
POWER DISSIPATION : Pd (mW)
200
100 10 1 100n 5
10
100
6
7
8
1 0.01
0.1
1
10
0 0
25
50
100
150
ZENER VOLTAGE : Vz (V)
ZENER CURRENT : Iz (mA)
AMBIENT TEMPERATURE : Ta (C)
Fig.1 Zener voltage characteristic
Fig.2 Operating resistance Zener current characteristic
Fig.3 Derating curve

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